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| SLD302B Block-type 200mW High Power Laser Diode Description The SLD302B is a high power laser diode mounted on a 3 x 3 x 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts. Features * Compact size 3 x 3 x 5mm block * High power output Po = 200mW * Hole for thermistor Applications * Solid state laser excitation * Medical use Structure GaAlAs double hetero-type laser diode Absolute Maximum Ratings (Tc = 25C) * Optical power output * Recommended optical power output * Reverse voltage * Operating temperature * Storage temperature Pin Configuration No. 1 2 Function LD cathode LD anode 1 LD cathode Po 200 Po 180 VR LD 2 Topr -10 to +50 Tstg -40 to +85 mW mW V C C 2 LD anode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E89104A81-PS SLD302B Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Radiation angle Perpendicular to junction (F. W. H. M.) Parallel to junction Positional accuracy Position Angle Differential efficiency F. W. H. M. : Full Width at Half Maximum Symbol Ith Iop Vop p // X Y, Z D (Tc = 25C) Conditions Min. Typ. 150 PO = 180mW PO = 180mW PO = 180mW PO = 180mW 770 28 12 400 1.9 Max. 200 500 3.0 840 40 17 300 PO = 180mW 100 3 PO = 180mW 0.5 0.8 Unit mA mA V nm degree m degree mW/mA -2- SLD302B Example of Representative Characteristics Optical power output vs. Forward current 200 Tc = -10C Po - Optical power output [mW] Ith - Threshold current [mA] 1000 Threshold current vs. Temperature characteristics 500 Tc = 0C Tc = 25C 100 Tc = 50C 100 -10 0 10 20 30 Tc - Case temperature [C] 40 50 0 0 250 IF - Forward current [mA] 500 Power dependence of far field pattern Radiation intensity (optional scale) (parallel to junction) Radiation intensity (optional scale) Tc = 25C Power depecdence of near field pattern Tc = 25C PO = 180mW PO = 90mW PO = 30mW PO = 180mW PO = 150mW PO = 100mW PO = 75mW PO = 50mW PO = 25mW -30 -20 -10 0 10 Angle [degree] 20 30 50m Oscillation wavelength vs. Temperature characteristics 830 PO = 180mW p - Oscillation wavelength [nm] 820 D - Differential efficiency [mW/mA] 0 10 20 30 40 50 Tc - Case temperature [C] Differential efficiency vs. Temperature characteristics 1.5 810 1.0 800 790 0.5 780 -10 0 -10 0 10 20 30 40 50 Tc - Case temperature [C] -3- SLD302B Power dependence of polarization ratio 80 Tc = 25C 2.5 60 Polarization ratio Po - Optical power output [W] 3.0 Optical power output vs. Operating current Pulse width = 1s Duty = 10% Tc = 23C PULSE 2.0 40 1.5 1.0 CW 0.5 20 0 0 0 50 100 150 200 250 Po - Optical power output [mW] 0 0.5 1.0 1.5 2.0 2.5 Iop - Operating current [A] Pulse width dependence of COD power 10 5.0 COD output [W] Duty = 10% TC = 23C 1.0 0.5 CW 0.1 0.1 0.5 1.0 5.0 10 50 100 Pulse width [s] COD (Catastrophic Optical Damage) -4- SLD302B Power Dependence of Wavelength Tc = 25C Po = 40mW Relative radiant intensity Relative radiant intensity Tc = 25C Po = 80mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25C Po = 120mW Relative radiant intensity Relative radiant intensity Tc = 25C Po = 160mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 25C Po = 200mW Relative radiant intensity 800 805 Wavelength [nm] 810 -5- SLD302B Temperature Dependence of Wavelength (PO = 180mW) Tc = -6C Tc = 12C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tc = 23C Tc = 35C Relative radiant intensity 805 815 Wavelength [nm] 825 Relative radiant intensity 805 815 Wavelength [nm] 825 Tc = 45C Relative radiant intensity 805 815 Wavelength [nm] 825 -6- SLD302B Package Outline Unit: mm M - 261 5.0 0.1 O1.5 for Thermistor 1.7 LD Chip 1.0 1.5 Ceramic Contact Plate (LD Cathode) Body (LD Anode) 0.2 3.0 0.1 1.8 SONY CODE EIAJ CODE JEDEC CODE M-261 PACKAGE WEIGHT 1g -7- 3.0 0.1 0.3 0.2 1.5 PACKAGE STRUCTURE |
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